Chinese Journal of Magnetic Resonance ›› 1989, Vol. 6 ›› Issue (1): 35-40.

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ESR STUDIES OF Γ-IRRADIATED SiO2 DOPED WITH IMPURITY IONS

Liu Yayan, Zhan Ruiyun, Qu Shuhua   

  1. Changchun Institute of Applied Chemistry, Academia Sinica
  • Received:1987-09-27 Revised:1988-02-03 Published:1989-03-05 Online:2018-01-22

Abstract: ESR method was used to study the properties of paramagnetic centers generated by γ-irradiating silica gel containing respectively phosphorus and boron as impurity ions. Oxygen holes O- were found to be stablized close to impurity ions. In addition, O2- radical and F colour center signals were observed and investigated. A dynamic equilibrium process would exist during F centers formation.

Key words: Doping SiO2, γ-irradiation, ESR, O2- radical, O- hole center