Abstract: Amorphous hydrogenated silicon nitride (a-SiNx:H) films deposited by plasma-enhanced chemical vapor deposition using SiH₄/NH₃/N₂ mixtures are analysed by infrared and proton nuclear magnetic resonance. The results demonstrate that hydrogen in the films exists in the forms of Si-H and N-H, both of which are in the state of cluster and dispersion. Substrate temperature effects on total hydrogen density and homogeneity,rf power controls the ratio of[N-H]/[Si-H]; after annealing, the spatial distribution of hydrogen is still in cluster and dispersion phase.

Key words: Silicon nitride, Hydrogen, IR, NMR